Технічний опис IGA03N120H2 Infineon
Description: IGA03N120 - DISCRETE IGBT WITHOU, Power - Max: 29 W, Current - Collector Pulsed (Icm): 9 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 8.2 A, Part Status: Active, Gate Charge: 8.6 nC, Test Condition: 800V, 3A, 82Ohm, 15V, Switching Energy: 140µJ (on), 150µJ (off), Td (on/off) @ 25°C: 9.2ns/281ns, Supplier Device Package: PG-TO220-3-31, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Інші пропозиції IGA03N120H2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IGA03N120H2 | Infineon Technologies |
 Description: IGA03N120 - DISCRETE IGBT WITHOUPower - Max: 29 W Current - Collector Pulsed (Icm): 9 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 8.2 A Part Status: Active Gate Charge: 8.6 nC Test Condition: 800V, 3A, 82Ohm, 15V Switching Energy: 140µJ (on), 150µJ (off) Td (on/off) @ 25°C: 9.2ns/281ns Supplier Device Package: PG-TO220-3-31 Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Input Type: Standard Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IGA03N120H2 | Infineon Technologies |
IGBTs HIGH SPEED TECH 1200V 3A |
товару немає в наявності |
В кошику од. на суму грн. |
| IGA03N120H2 |
|
Виробник: Infineon Technologies
Description: IGA03N120 - DISCRETE IGBT WITHOU
Power - Max: 29 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 8.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 140µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO220-3-31
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: IGA03N120 - DISCRETE IGBT WITHOU
Power - Max: 29 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 8.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 3A, 82Ohm, 15V
Switching Energy: 140µJ (on), 150µJ (off)
Td (on/off) @ 25°C: 9.2ns/281ns
Supplier Device Package: PG-TO220-3-31
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IGA03N120H2 |
|
Виробник: Infineon Technologies
IGBTs HIGH SPEED TECH 1200V 3A
IGBTs HIGH SPEED TECH 1200V 3A
товару немає в наявності
В кошику
од. на суму грн.