Технічний опис IGA03N120H2XKSA1 Infineon Technologies
Description: IGBT 1200V 3A 29W TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A, Supplier Device Package: PG-TO220-3-31, Td (on/off) @ 25°C: 9.2ns/281ns, Switching Energy: 290µJ, Test Condition: 800V, 3A, 82Ohm, 15V, Gate Charge: 8.6 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 29 W.
Інші пропозиції IGA03N120H2XKSA1
| Фото | Назва | Виробник | Інформація |
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IGA03N120H2XKSA1 | Виробник : Infineon Technologies |
 Description: IGBT 1200V 3A 29W TO220-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: PG-TO220-3-31 Td (on/off) @ 25°C: 9.2ns/281ns Switching Energy: 290µJ Test Condition: 800V, 3A, 82Ohm, 15V Gate Charge: 8.6 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9 A Power - Max: 29 W |
товару немає в наявності |
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| IGA03N120H2XKSA1 | Виробник : Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
товару немає в наявності |