IGB20N65S5ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT TRENCH FS 650V 40A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/115ns
Switching Energy: 360µJ (on), 150µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 125 W
на замовлення 930 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.27 грн |
| 10+ | 113.77 грн |
| 100+ | 90.56 грн |
| 500+ | 71.91 грн |
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Технічний опис IGB20N65S5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A, Supplier Device Package: PG-TO263-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/115ns, Switching Energy: 360µJ (on), 150µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 48 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 125 W.
Інші пропозиції IGB20N65S5ATMA1 за ціною від 57.82 грн до 154.22 грн
| Фото | Назва | Виробник | Інформація |
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IGB20N65S5ATMA1 | Виробник : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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IGB20N65S5ATMA1 | Виробник : Infineon Technologies |
5 high speed soft switching IGBT |
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IGB20N65S5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 28A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 137ns кількість в упаковці: 1000 шт |
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IGB20N65S5ATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH FS 650V 40A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/115ns Switching Energy: 360µJ (on), 150µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 125 W |
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IGB20N65S5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 28A; 62.5W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 28A Power dissipation: 62.5W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 137ns |
товар відсутній |