IGB50N65H5ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT TRENCH FS 650V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/173ns
Switching Energy: 1.59mJ (on), 750µJ (off)
Test Condition: 400V, 50A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 118.1 грн |
| 2000+ | 107.09 грн |
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Технічний опис IGB50N65H5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/173ns, Switching Energy: 1.59mJ (on), 750µJ (off), Test Condition: 400V, 50A, 12Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W.
Інші пропозиції IGB50N65H5ATMA1 за ціною від 108.15 грн до 244.57 грн
| Фото | Назва | Виробник | Інформація |
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IGB50N65H5ATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/173ns Switching Energy: 1.59mJ (on), 750µJ (off) Test Condition: 400V, 50A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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IGB50N65H5ATMA1 | Виробник : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
на замовлення 995 шт: термін постачання 21-30 дні (днів) |
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IGB50N65H5ATMA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 650V 80A 270000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IGB50N65H5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.7A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Manufacturer series: H5 Turn-on time: 26ns Turn-off time: 147ns кількість в упаковці: 1000 шт |
товар відсутній |
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IGB50N65H5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 53.7A; 135W; D2PAK; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 53.7A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Manufacturer series: H5 Turn-on time: 26ns Turn-off time: 147ns |
товар відсутній |