Технічний опис IGC18T120T8LX1SA2 Infineon Technologies
Description: IGBT 1200V 15A SAWN ON FOIL, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A, Supplier Device Package: Die, IGBT Type: Trench Field Stop, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 45 A.
Інші пропозиції IGC18T120T8LX1SA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IGC18T120T8LX1SA2 | Виробник : Infineon Technologies |
 Description: IGBT 1200V 15A SAWN ON FOILPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A Supplier Device Package: Die IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A |
товару немає в наявності |
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IGC18T120T8LX1SA2 | Виробник : Infineon Technologies |
IGBT Transistors The TRENCHSTOP IGBT combines the unique TRENCHSTOP and Fieldstop technology and is a benchmark in the industry. |
товару немає в наявності |