IGD03N120S7ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT TRENCH 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
Description: IGBT TRENCH 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.41 грн |
| 10+ | 61.86 грн |
| 25+ | 55.93 грн |
| 100+ | 46.36 грн |
| 250+ | 43.43 грн |
| 500+ | 41.66 грн |
| 1000+ | 39.55 грн |
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Технічний опис IGD03N120S7ATMA1 Infineon Technologies
Description: IGBT TRENCH 1200V 10A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/89ns, Switching Energy: 210µJ (on), 160µJ (off), Test Condition: 600V, 3A, 60Ohm, 15V, Gate Charge: 24 nC, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 9 A, Power - Max: 45 W.
Інші пропозиції IGD03N120S7ATMA1 за ціною від 36.74 грн до 108.04 грн
| Фото | Назва | Виробник | Інформація |
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IGD03N120S7ATMA1 | Виробник : Infineon Technologies |
 IGBTs INDUSTRY 14 |
на замовлення 4945 шт: термін постачання 21-30 дні (днів) |
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| IGD03N120S7ATMA1 | Виробник : Infineon Technologies | IGD03N120S7ATMA1 |
товару немає в наявності |
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IGD03N120S7ATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH 1200V 10A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/89ns Switching Energy: 210µJ (on), 160µJ (off) Test Condition: 600V, 3A, 60Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9 A Power - Max: 45 W |
товару немає в наявності |