IGK048B041SXTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 4+ | 89.42 грн |
| 10+ | 62.69 грн |
| 25+ | 56.77 грн |
| 100+ | 47.21 грн |
| 250+ | 44.31 грн |
| 500+ | 42.57 грн |
| 1000+ | 40.45 грн |
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Технічний опис IGK048B041SXTSA1 Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V, Power Dissipation (Max): 1.7W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: SG-UFWLB-16-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V.
Інші пропозиції IGK048B041SXTSA1
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IGK048B041SXTSA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 40V 53A 16WLBGA Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V Power Dissipation (Max): 1.7W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V |
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