IGK120B041SXTSA1 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.65 грн |
| 12+ | 27.47 грн |
| 100+ | 19.40 грн |
| 500+ | 18.50 грн |
| 1000+ | 18.36 грн |
| 4000+ | 16.91 грн |
| 8000+ | 15.46 грн |
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Технічний опис IGK120B041SXTSA1 Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V, Power Dissipation (Max): 1.2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: SG-UFWLB-16-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V.
Інші пропозиції IGK120B041SXTSA1 за ціною від 20.93 грн до 49.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IGK120B041SXTSA1 | Infineon Technologies |
 Description: GANFET N-CH 40V 30A 16WLBGAPackaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V Power Dissipation (Max): 1.2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V |
на замовлення 3640 шт: термін постачання 21-31 дні (днів) |
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| IGK120B041SXTSA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.70 грн |
| 10+ | 33.88 грн |
| 25+ | 30.39 грн |
| 100+ | 24.90 грн |
| 250+ | 23.17 грн |
| 500+ | 22.13 грн |
| 1000+ | 20.93 грн |