IGK120B041SXTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
| Кількість | Ціна |
|---|---|
| 8+ | 42.25 грн |
| 11+ | 28.70 грн |
| 25+ | 25.73 грн |
| 100+ | 21.09 грн |
| 250+ | 19.63 грн |
| 500+ | 18.75 грн |
| 1000+ | 17.73 грн |
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Технічний опис IGK120B041SXTSA1 Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V, Power Dissipation (Max): 1.2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: SG-UFWLB-16-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V.
Інші пропозиції IGK120B041SXTSA1 за ціною від 17.66 грн до 96.55 грн
| Фото | Назва | Виробник | Інформація |
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IGK120B041SXTSA1 | Виробник : Infineon Technologies |
GaN FETs CoolGaN Bidirectional Switch |
на замовлення 3998 шт: термін постачання 21-30 дні (днів) |
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IGK120B041SXTSA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 40V 30A 16WLBGA Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V Power Dissipation (Max): 1.2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V |
товару немає в наявності |