IGK120B041SXTSA1 Infineon Technologies

Description: GANFET N-CH 40V 30A 16WLBGA, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V, Power Dissipation (Max): 1.2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 3mA, Supplier Device Package: SG-UFWLB-16-2, Drive Voltage (Max Rds On, Min Rds On): 5V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V.