IGL65R055D2XUMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 434.05 грн |
| 10+ | 327.88 грн |
| 100+ | 230.88 грн |
| 500+ | 205.15 грн |
| 1000+ | 198.89 грн |
| 3000+ | 168.29 грн |
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Технічний опис IGL65R055D2XUMA1 Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN, Packaging: Tape & Reel (TR), Package / Case: 8-TDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A, Power Dissipation (Max): 111W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-TSON-8-U06, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V.
Інші пропозиції IGL65R055D2XUMA1 за ціною від 194.85 грн до 468.62 грн
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IGL65R055D2XUMA1 | Виробник : Infineon Technologies |
 Description: GANFET N-CH 650V 22A 8TDFNPackaging: Cut Tape (CT) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
на замовлення 1526 шт: термін постачання 21-31 дні (днів) |
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IGL65R055D2XUMA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 650V 22A 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A Power Dissipation (Max): 111W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-TSON-8-U06 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
товару немає в наявності |