Технічний опис IGLD60R190D1SAUMA1 Infineon Technologies
Description: GAN HV PG-LSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-LDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 960µA, Supplier Device Package: PG-LSON-8-1, Part Status: Active, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V.
Інші пропозиції IGLD60R190D1SAUMA1
| Фото | Назва | Виробник | Інформація |
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IGLD60R190D1SAUMA1 | Виробник : Infineon Technologies |
Description: GAN HV PG-LSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 960µA Supplier Device Package: PG-LSON-8-1 Part Status: Active Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V |
товару немає в наявності |
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IGLD60R190D1SAUMA1 | Виробник : Infineon Technologies |
 GaN FETs HV GAN DISCRETES |
товару немає в наявності |