IGLD65R140D2AUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Description: GAN HV
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
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Технічний опис IGLD65R140D2AUMA1 Infineon Technologies
Description: GAN HV, Packaging: Tape & Reel (TR), Package / Case: 8-LDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: PG-LSON-8-1, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V.
Інші пропозиції IGLD65R140D2AUMA1
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IGLD65R140D2AUMA1 | Виробник : Infineon Technologies |
Description: GAN HV Packaging: Cut Tape (CT) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: PG-LSON-8-1 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V |
товару немає в наявності |