IGLD65R140D2AUMA1 Infineon Technologies

Description: GANFET N-CH 650V 12A 8LDFN, Packaging: Tape & Reel (TR), Package / Case: 8-LDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: PG-LSON-8-1, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V.