| Кількість | Ціна |
|---|---|
| 1+ | 864.04 грн |
| 10+ | 610.18 грн |
| 100+ | 424.89 грн |
| 1000+ | 360.92 грн |
Відгуки про товар
Написати відгук
Технічний опис IGLT65R025D2AUMA1 Infineon Technologies
Description: GANFET N-CH 650V 67A 16SOP, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 18A, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 6.1mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V.
Інші пропозиції IGLT65R025D2AUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IGLT65R025D2AUMA1 | Виробник : Infineon Technologies |
 Description: GANFET N-CH 650V 67A 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 18A Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
товару немає в наявності |
|
|
|
IGLT65R025D2AUMA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 650V 67A 16SOP Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 18A Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
товару немає в наявності |