IGLT65R025D2AUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGLT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис IGLT65R025D2AUMA1 Infineon Technologies
Description: IGLT65R025D2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 6.1mA, Supplier Device Package: PG-HDSOP-16-8, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V.
Інші пропозиції IGLT65R025D2AUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
IGLT65R025D2AUMA1 | Виробник : Infineon Technologies |
Description: IGLT65R025D2AUMA1 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
товару немає в наявності |