| Кількість | Ціна |
|---|---|
| 1+ | 976.89 грн |
| 10+ | 703.56 грн |
| 25+ | 610.38 грн |
| 50+ | 609.67 грн |
| 100+ | 507.47 грн |
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Технічний опис IGOT60R070D1AUMA3 Infineon Technologies
Description: GANFET N-CH, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 20-PowerSOIC (0.433", 11.00mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): -10V, Part Status: Active, Supplier Device Package: PG-DSO-20-87, Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Power Dissipation (Max): 125W (Tc).
Інші пропозиції IGOT60R070D1AUMA3 за ціною від 535.00 грн до 1041.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IGOT60R070D1AUMA3 | Infineon Technologies |
 Description: GANFET N-CHInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): -10V Part Status: Active Supplier Device Package: PG-DSO-20-87 Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Power Dissipation (Max): 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 31A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-PowerSOIC (0.433", 11.00mm Width) Packaging: Cut Tape (CT) |
на замовлення 789 шт: термін постачання 21-31 дні (днів) |
|
| IGOT60R070D1AUMA3 |
|
Виробник: Infineon Technologies
Description: GANFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-DSO-20-87
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Cut Tape (CT)
Description: GANFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Active
Supplier Device Package: PG-DSO-20-87
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
Packaging: Cut Tape (CT)
на замовлення 789 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1041.12 грн |
| 10+ | 703.39 грн |
| 100+ | 535.00 грн |