на замовлення 800 шт:
термін постачання 147-156 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1282.61 грн |
| 10+ | 1043.97 грн |
| 25+ | 848.30 грн |
| 50+ | 812.02 грн |
| 100+ | 779.36 грн |
| 250+ | 741.63 грн |
| 500+ | 709.70 грн |
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Технічний опис IGOT65R025D2AUMA1 Infineon Technologies
Description: IGOT65R025D2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 20-BFSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Power Dissipation (Max): 184W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 6.1mA, Supplier Device Package: PG-DSO-20-91, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V.
Інші пропозиції IGOT65R025D2AUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IGOT65R025D2AUMA1 | Виробник : Infineon Technologies |
 Description: IGOT65R025D2AUMA1Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
товару немає в наявності |
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IGOT65R025D2AUMA1 | Виробник : Infineon Technologies |
Description: IGOT65R025D2AUMA1 Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Power Dissipation (Max): 184W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 6.1mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V |
товару немає в наявності |