на замовлення 800 шт:
термін постачання 147-156 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 710.30 грн |
| 10+ | 564.13 грн |
| 25+ | 444.11 грн |
| 100+ | 393.31 грн |
| 250+ | 370.81 грн |
| 500+ | 353.40 грн |
| 800+ | 338.16 грн |
Відгуки про товар
Написати відгук
Технічний опис IGOT65R055D2AUMA1 Infineon Technologies
Description: IGOT65R055D2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 20-BFSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-DSO-20-91, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V.
Інші пропозиції IGOT65R055D2AUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IGOT65R055D2AUMA1 | Виробник : Infineon Technologies |
 Description: IGOT65R055D2AUMA1Packaging: Tape & Reel (TR) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
товару немає в наявності |
|
|
|
IGOT65R055D2AUMA1 | Виробник : Infineon Technologies |
Description: IGOT65R055D2AUMA1 Packaging: Cut Tape (CT) Package / Case: 20-BFSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-DSO-20-91 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V |
товару немає в наявності |