IGT40R070D1ATMA1 Infineon Technologies

Description: GAN HV, Packaging: Bulk, Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-HSOF-8-3, Part Status: Active, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 400 V, Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 320 V.