Технічний опис IGT60R070D1ATMA1 Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 2.6mA, Supplier Device Package: PG-HSOF-8-3, Part Status: Obsolete, Vgs (Max): -10V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V.
Інші пропозиції IGT60R070D1ATMA1
| Фото | Назва | Виробник | Інформація |
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IGT60R070D1ATMA1 | Виробник : Infineon Technologies |
 Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
товару немає в наявності |
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IGT60R070D1ATMA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 600V 31A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
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IGT60R070D1ATMA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 600V 31A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
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IGT60R070D1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhancement Gate current: 20mA Power dissipation: 125W |
товару немає в наявності |