Технічний опис IGT60R070D1ATMA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A, Type of transistor: N-JFET, Technology: CoolGaN™, Polarisation: unipolar, Kind of transistor: HEMT, Drain-source voltage: 600V, Drain current: 31A, Pulsed drain current: 60A, Power dissipation: 125W, Case: PG-HSOF-8-3, Gate-source voltage: -10V, On-state resistance: 70mΩ, Mounting: SMD, Gate charge: 5.8nC, Kind of package: tape, Kind of channel: enhanced, Gate current: 20mA, кількість в упаковці: 2000 шт.
Інші пропозиції IGT60R070D1ATMA1
| Фото | Назва | Виробник | Інформація |
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IGT60R070D1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhanced Gate current: 20mA кількість в упаковці: 2000 шт |
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IGT60R070D1ATMA1 | Виробник : Infineon Technologies |
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R |
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IGT60R070D1ATMA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 600V 31A 8HSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
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IGT60R070D1ATMA1 | Виробник : Infineon Technologies |
Description: GANFET N-CH 600V 31A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
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IGT60R070D1ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A Type of transistor: N-JFET Technology: CoolGaN™ Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 600V Drain current: 31A Pulsed drain current: 60A Power dissipation: 125W Case: PG-HSOF-8-3 Gate-source voltage: -10V On-state resistance: 70mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: tape Kind of channel: enhanced Gate current: 20mA |
товар відсутній |