IGT65R035D2ATMA1 Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 744.19 грн |
| 10+ | 518.41 грн |
| 100+ | 334.82 грн |
| 1000+ | 291.32 грн |
| 2000+ | 284.42 грн |
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Технічний опис IGT65R035D2ATMA1 Infineon Technologies
Description: HV GAN DISCRETES, Vgs (Max): -10V, Supplier Device Package: PG-HSOF-8, Vgs(th) (Max) @ Id: 1.6V @ 4.2mA, Power Dissipation (Max): 167W (Tc), Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V, Drain to Source Voltage (Vdss): 650 V.
Інші пропозиції IGT65R035D2ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IGT65R035D2ATMA1 | Infineon Technologies |
Description: HV GAN DISCRETES Vgs (Max): -10V Supplier Device Package: PG-HSOF-8 Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Power Dissipation (Max): 167W (Tc) Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Drain to Source Voltage (Vdss): 650 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
|
|
IGT65R035D2ATMA1 | Infineon Technologies |
Description: HV GAN DISCRETES Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): -10V Supplier Device Package: PG-HSOF-8 Vgs(th) (Max) @ Id: 1.6V @ 4.2mA Power Dissipation (Max): 167W (Tc) Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| IGT65R035D2ATMA1 |
Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Description: HV GAN DISCRETES
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IGT65R035D2ATMA1 |
Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: HV GAN DISCRETES
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Power Dissipation (Max): 167W (Tc)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.