Технічний опис IGW40N60TP Infineon technologies
Description: IGW40N60 - DISCRETE IGBT WITHOUT, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/222ns, Switching Energy: 1.06mJ (on), 610µJ (off), Test Condition: 400V, 40A, 10.1Ohm, 15V, Gate Charge: 177 nC, Part Status: Active, Current - Collector (Ic) (Max): 67 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 246 W.
Інші пропозиції IGW40N60TP
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
IGW40N60TP | Виробник : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/222ns Switching Energy: 1.06mJ (on), 610µJ (off) Test Condition: 400V, 40A, 10.1Ohm, 15V Gate Charge: 177 nC Part Status: Active Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 246 W |
товару немає в наявності |