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Технічний опис IGZ75N65H5XKSA1 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 75A, Power dissipation: 197W, Case: TO247-4, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 166nC, Kind of package: tube, Turn-on time: 37ns, Turn-off time: 415ns.
Інші пропозиції IGZ75N65H5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IGZ75N65H5XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 197W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 166nC Kind of package: tube Turn-on time: 37ns Turn-off time: 415ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IGZ75N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 197W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 415ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 197W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 166nC
Kind of package: tube
Turn-on time: 37ns
Turn-off time: 415ns
товару немає в наявності
В кошику
од. на суму грн.