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Технічний опис IGZ75N65H5XKSA1 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4, Type of transistor: IGBT, Case: TO247-4, Mounting: THT, Kind of package: tube, Pulsed collector current: 300A, Turn-on time: 37ns, Turn-off time: 415ns, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 650V, Power dissipation: 197W, Gate charge: 166nC.
Інші пропозиції IGZ75N65H5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IGZ75N65H5XKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 197W; TO247-4 Type of transistor: IGBT Case: TO247-4 Mounting: THT Kind of package: tube Pulsed collector current: 300A Turn-on time: 37ns Turn-off time: 415ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 650V Power dissipation: 197W Gate charge: 166nC |
товару немає в наявності |
В кошику од. на суму грн. |
| IGZ75N65H5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 37ns
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 197W
Gate charge: 166nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 197W; TO247-4
Type of transistor: IGBT
Case: TO247-4
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 37ns
Turn-off time: 415ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 650V
Power dissipation: 197W
Gate charge: 166nC
товару немає в наявності
В кошику
од. на суму грн.