IHFW40N65R5SXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
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Технічний опис IHFW40N65R5SXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 61A HSIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: PG-HSIP247-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 44ns/363ns, Switching Energy: 1.52mJ (on), 700µJ (off), Test Condition: 400V, 40A, 23.1Ohm, 15V, Gate Charge: 142 nC, Part Status: Active, Current - Collector (Ic) (Max): 61 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 108 W.
Інші пропозиції IHFW40N65R5SXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IHFW40N65R5SXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 61A HSIP247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/363ns Switching Energy: 1.52mJ (on), 700µJ (off) Test Condition: 400V, 40A, 23.1Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 61 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 108 W |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
|
|
IHFW40N65R5SXKSA1 | Infineon Technologies |
IGBTs Y |
товару немає в наявності |
В кошику од. на суму грн. |
| IHFW40N65R5SXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
Description: IGBT TRENCH FS 650V 61A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/363ns
Switching Energy: 1.52mJ (on), 700µJ (off)
Test Condition: 400V, 40A, 23.1Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 61 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 108 W
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.
| IHFW40N65R5SXKSA1 |
![]() |
Виробник: Infineon Technologies
IGBTs Y
IGBTs Y
товару немає в наявності
В кошику
од. на суму грн.


