IHW25N120R2FKSA1

IHW25N120R2FKSA1 Infineon Technologies


infineon-ihw25n120r2-datasheet-v02_03-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис IHW25N120R2FKSA1 Infineon Technologies

Description: IGBT 1200V 50A 365W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: -/324ns, Switching Energy: 1.59mJ, Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 60.7 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 365 W.

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IHW25N120R2FKSA1 IHW25N120R2FKSA1 Виробник : Infineon Technologies IHW25N120R2.pdf Description: IGBT 1200V 50A 365W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: -/324ns
Switching Energy: 1.59mJ
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 60.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 365 W
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IHW25N120R2FKSA1 IHW25N120R2FKSA1 Виробник : Infineon Technologies IHW25N120R2.pdf IGBT Transistors HOME APPLIANCES 14
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