IHW30N120R3FKSA1

IHW30N120R3FKSA1 Infineon Technologies


infineon-ihw30n120r3-datasheet-v02_04-en.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube
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Технічний опис IHW30N120R3FKSA1 Infineon Technologies

Description: IGBT 1200V 60A 349W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A, Supplier Device Package: PG-TO247-3-1, Td (on/off) @ 25°C: -/326ns, Switching Energy: 1.47mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 263 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 349 W.

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IHW30N120R3FKSA1 IHW30N120R3FKSA1 Виробник : Infineon Technologies Infineon--DS-v02_03-EN.pdf?fileId=db3a30433a047ba0013a731f0e923aa7 Description: IGBT 1200V 60A 349W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: -/326ns
Switching Energy: 1.47mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 263 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 349 W
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IHW30N120R3FKSA1 IHW30N120R3FKSA1 Виробник : Infineon Technologies Infineon-IHW30N120R3-DataSheet-v02_04-EN-1226626.pdf IGBT Transistors IGBT PRODUCTS TrenchStop RC
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