IHW40N120R3FKSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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Технічний опис IHW40N120R3FKSA1 Infineon Technologies
Description: IGBT 1200V 80A 429W TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: -/336ns, Switching Energy: 2.02mJ (off), Test Condition: 600V, 40A, 7.5Ohm, 15V, Gate Charge: 335 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 429 W.
Інші пропозиції IHW40N120R3FKSA1
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IHW40N120R3FKSA1 | Виробник : Infineon Technologies |
Description: IGBT 1200V 80A 429W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: -/336ns Switching Energy: 2.02mJ (off) Test Condition: 600V, 40A, 7.5Ohm, 15V Gate Charge: 335 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 429 W |
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IHW40N120R3FKSA1 | Виробник : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
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