IHW40N60RFKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/193ns
Switching Energy: 750µJ (off)
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 223 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 305 W
на замовлення 544 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
121+ | 165.88 грн |
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Технічний опис IHW40N60RFKSA1 Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench, Td (on/off) @ 25°C: -/193ns, Switching Energy: 750µJ (off), Test Condition: 400V, 40A, 5.6Ohm, 15V, Gate Charge: 223 nC, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 305 W.
Інші пропозиції IHW40N60RFKSA1 за ціною від 191.97 грн до 367.33 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IHW40N60RFKSA1 | Виробник : Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Bod |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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IHW40N60RFKSA1 | Виробник : Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 305W 3-Pin(3+Tab) TO-247 Tube |
на замовлення 31 шт: термін постачання 21-31 дні (днів) |
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IHW40N60RFKSA1 | Виробник : Infineon Technologies | Trans IGBT Chip N-CH 600V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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IHW40N60RFKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 152W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 223nC Kind of package: tube Turn-off time: 217ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) кількість в упаковці: 1 шт |
товар відсутній |
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IHW40N60RFKSA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH 600V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Td (on/off) @ 25°C: -/193ns Switching Energy: 750µJ (off) Test Condition: 400V, 40A, 5.6Ohm, 15V Gate Charge: 223 nC Part Status: Last Time Buy Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 305 W |
товар відсутній |
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IHW40N60RFKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 152W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 223nC Kind of package: tube Turn-off time: 217ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
товар відсутній |