IHW40N65R6XKSA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 54A; 105W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 54A
Power dissipation: 105W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 256ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
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Технічний опис IHW40N65R6XKSA1 INFINEON TECHNOLOGIES
Description: IGBT 650V 83A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 99 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 17ns/211ns, Switching Energy: 1.1mJ (on), 420µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 159 nC, Part Status: Active, Current - Collector (Ic) (Max): 83 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 210 W.
Інші пропозиції IHW40N65R6XKSA1 за ціною від 85.28 грн до 312.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IHW40N65R6XKSA1 | Infineon Technologies |
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package |
на замовлення 479 шт: термін постачання 21-30 дні (днів) |
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IHW40N65R6XKSA1 | Infineon Technologies |
Description: IGBT 650V 83A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 17ns/211ns Switching Energy: 1.1mJ (on), 420µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 159 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 210 W |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| IHW40N65R6XKSA1 |
|
Виробник: Infineon Technologies
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
IGBTs 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package
на замовлення 479 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 277.94 грн |
| 10+ | 149.95 грн |
| 100+ | 106.43 грн |
| 480+ | 88.81 грн |
| 1200+ | 85.28 грн |
| IHW40N65R6XKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
Description: IGBT 650V 83A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 99 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 40A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 17ns/211ns
Switching Energy: 1.1mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 159 nC
Part Status: Active
Current - Collector (Ic) (Max): 83 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 210 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 312.41 грн |
| 30+ | 164.42 грн |
| 120+ | 134.31 грн |