IHW50N65R6XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT 650V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
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Технічний опис IHW50N65R6XKSA1 Infineon Technologies
Description: IGBT 650V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 108 ns, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A, Supplier Device Package: PG-TO247-3, Td (on/off) @ 25°C: 21ns/261ns, Switching Energy: 1.5mJ (on), 660µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 199 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 251 W.
Інші пропозиції IHW50N65R6XKSA1 за ціною від 105.02 грн до 344.54 грн
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IHW50N65R6XKSA1 | Infineon Technologies |
Description: IGBT 650V 100A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 108 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A Supplier Device Package: PG-TO247-3 Td (on/off) @ 25°C: 21ns/261ns Switching Energy: 1.5mJ (on), 660µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 199 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 251 W |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IHW50N65R6XKSA1 | Infineon Technologies |
IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package |
на замовлення 236 шт: термін постачання 21-30 дні (днів) |
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| IHW50N65R6XKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
Description: IGBT 650V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 289.42 грн |
| IHW50N65R6XKSA1 |
|
Виробник: Infineon Technologies
IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package
IGBTs 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 344.54 грн |
| 10+ | 222.09 грн |
| 100+ | 144.49 грн |
| 480+ | 120.53 грн |
| 1200+ | 112.07 грн |
| 2640+ | 105.02 грн |