IKB30N65ES5ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT TRENCH FS 650V 62A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 62 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 188 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1000+ | 90.57 грн |
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Технічний опис IKB30N65ES5ATMA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 62A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 75 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A, Supplier Device Package: PG-TO263-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 17ns/124ns, Switching Energy: 560µJ (on), 320µJ (off), Test Condition: 400V, 30A, 13Ohm, 15V, Gate Charge: 70 nC, Current - Collector (Ic) (Max): 62 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 188 W.
Інші пропозиції IKB30N65ES5ATMA1 за ціною від 95.10 грн до 321.36 грн
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IKB30N65ES5ATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH FS 650V 62A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 62 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 188 W |
на замовлення 1659 шт: термін постачання 21-31 дні (днів) |
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IKB30N65ES5ATMA1 | Виробник : Infineon Technologies |
IGBTs INDUSTRY 14 |
на замовлення 1070 шт: термін постачання 21-30 дні (днів) |
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IKB30N65ES5ATMA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 650V 62A 188000mW 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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IKB30N65ES5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK Case: D2PAK Kind of package: reel; tape Mounting: SMD Technology: TRENCHSTOP™ 5 Turn-on time: 29ns Gate charge: 70nC Turn-off time: 154ns Gate-emitter voltage: ±20V Collector current: 39.5A Power dissipation: 94W Pulsed collector current: 120A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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IKB30N65ES5ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 39.5A; 94W; D2PAK Case: D2PAK Kind of package: reel; tape Mounting: SMD Technology: TRENCHSTOP™ 5 Turn-on time: 29ns Gate charge: 70nC Turn-off time: 154ns Gate-emitter voltage: ±20V Collector current: 39.5A Power dissipation: 94W Pulsed collector current: 120A Collector-emitter voltage: 650V Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |