IKD04N60RATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT TRENCH FS 600V 8A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/146ns
Switching Energy: 90µJ (on), 150µJ (off)
Test Condition: 400V, 4A, 43Ohm, 15V
Gate Charge: 27 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 75.87 грн |
| 10+ | 45.83 грн |
| 100+ | 30.09 грн |
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Технічний опис IKD04N60RATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 8A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/146ns, Switching Energy: 90µJ (on), 150µJ (off), Test Condition: 400V, 4A, 43Ohm, 15V, Gate Charge: 27 nC, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.
Інші пропозиції IKD04N60RATMA1 за ціною від 16.49 грн до 96.43 грн
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IKD04N60RATMA1 | Виробник : Infineon Technologies |
IGBTs IGBT w/ INTG DIODE 600V 8A |
на замовлення 170 шт: термін постачання 21-30 дні (днів) |
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IKD04N60RATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT; IGBT Power dissipation: 75W; 75W Case: DPAK; DPAK Mounting: SMD; SMD Gate charge: 27nC; 27nC Kind of package: reel; tape; reel; tape Gate-emitter voltage: ±20V; ±20V Collector-emitter voltage: 600V; 600V Features of semiconductor devices: integrated anti-parallel diode; integrated anti-parallel diode Technology: TRENCHSTOP™ RC; TRENCHSTOP™ RC Turn-on time: 22ns; 22ns Turn-off time: 317ns; 317ns Collector current: 4A; 4A Pulsed collector current: 12A; 12A |
на замовлення 2451 шт: термін постачання 21-30 дні (днів) |
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IKD04N60RATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT; IGBT Power dissipation: 75W; 75W Case: DPAK; DPAK Mounting: SMD; SMD Gate charge: 27nC; 27nC Kind of package: reel; tape; reel; tape Gate-emitter voltage: ±20V; ±20V Collector-emitter voltage: 600V; 600V Features of semiconductor devices: integrated anti-parallel diode; integrated anti-parallel diode Technology: TRENCHSTOP™ RC; TRENCHSTOP™ RC Turn-on time: 22ns; 22ns Turn-off time: 317ns; 317ns Collector current: 4A; 4A Pulsed collector current: 12A; 12A кількість в упаковці: 1 шт |
на замовлення 2451 шт: термін постачання 7-14 дні (днів) |
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IKD04N60RATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH FS 600V 8A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/146ns Switching Energy: 90µJ (on), 150µJ (off) Test Condition: 400V, 4A, 43Ohm, 15V Gate Charge: 27 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 75 W |
товару немає в наявності |