IKD10N60RATMA1 Infineon Technologies
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.10 грн |
| 10+ | 55.06 грн |
| 100+ | 36.59 грн |
| 500+ | 31.69 грн |
| 1000+ | 30.04 грн |
| 2500+ | 28.76 грн |
| 5000+ | 24.77 грн |
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Технічний опис IKD10N60RATMA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 20A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 14ns/192ns, Switching Energy: 210µJ (on), 380µJ (off), Test Condition: 400V, 10A, 23Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.
Інші пропозиції IKD10N60RATMA1 за ціною від 29.05 грн до 106.68 грн
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IKD10N60RATMA1 | Виробник : Infineon Technologies |
 Description: IGBT TRENCH FS 600V 20A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/192ns Switching Energy: 210µJ (on), 380µJ (off) Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
на замовлення 1060 шт: термін постачання 21-31 дні (днів) |
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| IKD10N60RATMA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 600V 20A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
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IKD10N60RATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 64nC Turn-on time: 24ns Turn-off time: 331ns Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товару немає в наявності |
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IKD10N60RATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH FS 600V 20A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 14ns/192ns Switching Energy: 210µJ (on), 380µJ (off) Test Condition: 400V, 10A, 23Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
товару немає в наявності |
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IKD10N60RATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 10A; 150W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 150W Case: DPAK Mounting: SMD Kind of package: reel; tape Gate charge: 64nC Turn-on time: 24ns Turn-off time: 331ns Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 30A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |