IKD15N60RAATMA1

IKD15N60RAATMA1 Infineon Technologies


ds_ikd15n60ra_2_1.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 30A 250000mW Automotive 3-Pin(2+Tab) DPAK T/R
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Технічний опис IKD15N60RAATMA1 Infineon Technologies

Description: IGBT 600V 30A 250W TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 16ns/183ns, Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.

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IKD15N60RAATMA1 IKD15N60RAATMA1 Виробник : Infineon Technologies IKD15N60RA.pdf Description: IGBT 600V 30A 250W TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 16ns/183ns
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
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IKD15N60RAATMA1 IKD15N60RAATMA1 Виробник : Infineon Technologies DS_IKD15N60RA_2_1-359796.pdf IGBT Transistors IGBT PRODUCTS
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