IKD15N60RAATMA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Chip N-CH 600V 30A 250000mW Automotive 3-Pin(2+Tab) DPAK T/R
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Технічний опис IKD15N60RAATMA1 Infineon Technologies
Description: IGBT TRENCH 600V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 110 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: PG-TO252-3, IGBT Type: Trench, Td (on/off) @ 25°C: 16ns/183ns, Test Condition: 400V, 15A, 15Ohm, 15V, Gate Charge: 90 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 250 W.
Інші пропозиції IKD15N60RAATMA1
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IKD15N60RAATMA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH 600V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Td (on/off) @ 25°C: 16ns/183ns Test Condition: 400V, 15A, 15Ohm, 15V Gate Charge: 90 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 45 A Power - Max: 250 W |
товару немає в наявності |
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IKD15N60RAATMA1 | Виробник : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
товару немає в наявності |