IKFW40N65DH5XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 53A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/105ns
Switching Energy: 1.17mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 14Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
| Кількість | Ціна |
|---|---|
| 1+ | 501.92 грн |
| 30+ | 274.02 грн |
| 120+ | 227.94 грн |
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Технічний опис IKFW40N65DH5XKSA1 Infineon Technologies
Description: IGBT TRENCH FS 650V 53A HSIP247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 64 ns, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A, Supplier Device Package: PG-HSIP247-3-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/105ns, Switching Energy: 1.17mJ (on), 500µJ (off), Test Condition: 400V, 40A, 14Ohm, 15V, Gate Charge: 70 nC, Part Status: Active, Current - Collector (Ic) (Max): 53 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 106 W.
Інші пропозиції IKFW40N65DH5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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IKFW40N65DH5XKSA1 | Infineon Technologies |
IGBTs 650 V, 40 A IGBT in TO-247 advanced isolation package |
товару немає в наявності |
В кошику од. на суму грн. |
| IKFW40N65DH5XKSA1 |
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Виробник: Infineon Technologies
IGBTs 650 V, 40 A IGBT in TO-247 advanced isolation package
IGBTs 650 V, 40 A IGBT in TO-247 advanced isolation package
товару немає в наявності
В кошику
од. на суму грн.


