IKFW50N60DH3EXKSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IKFW50N60DH3EXKSA1 - IGBT, 40 A, 2.2 V, 130 W, 600 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 2.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 130W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 40A
Anzahl der Pins: 3Pin(s)
Produktpalette: TRENCHSTOP 3
Kollektor-Emitter-Spannung, max.: 600V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
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Технічний опис IKFW50N60DH3EXKSA1 INFINEON
Description: IGBT TRENCH FS 600V 40A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 64 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Supplier Device Package: PG-TO247-3-AI, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 21ns/174ns, Switching Energy: 1.28mJ (on), 560µJ (off), Test Condition: 400V, 40A, 8Ohm, 15V, Gate Charge: 160 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 130 W.
Інші пропозиції IKFW50N60DH3EXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IKFW50N60DH3EXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 40A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Supplier Device Package: PG-TO247-3-AI IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/174ns Switching Energy: 1.28mJ (on), 560µJ (off) Test Condition: 400V, 40A, 8Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 130 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKFW50N60DH3EXKSA1 | Infineon Technologies |
IGBTs HOME APPLIANCES |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKFW50N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 95W Case: PG-TO247-3-AI Mounting: THT Gate charge: 160nC Kind of package: tube Pulsed collector current: 120A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 60ns Turn-off time: 192ns Gate-emitter voltage: ±20V Collector current: 37A |
товару немає в наявності |
В кошику од. на суму грн. |
| IKFW50N60DH3EXKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
товару немає в наявності
В кошику
од. на суму грн.
| IKFW50N60DH3EXKSA1 |
|
Виробник: Infineon Technologies
IGBTs HOME APPLIANCES
IGBTs HOME APPLIANCES
товару немає в наявності
В кошику
од. на суму грн.
| IKFW50N60DH3EXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 60ns
Turn-off time: 192ns
Gate-emitter voltage: ±20V
Collector current: 37A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 60ns
Turn-off time: 192ns
Gate-emitter voltage: ±20V
Collector current: 37A
товару немає в наявності
В кошику
од. на суму грн.