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Технічний опис IKFW60N60DH3EXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 68 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, Supplier Device Package: PG-TO247-3-AI, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/170ns, Switching Energy: 1.57mJ (on), 720µJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 53 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 141 W.
Інші пропозиції IKFW60N60DH3EXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IKFW60N60DH3EXKSA1 | Infineon Technologies |
 Description: IGBT TRENCH FS 600V 53A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A Supplier Device Package: PG-TO247-3-AI IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/170ns Switching Energy: 1.57mJ (on), 720µJ (off) Test Condition: 400V, 50A, 7Ohm, 15V Gate Charge: 210 nC Part Status: Active Current - Collector (Ic) (Max): 53 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 141 W |
товару немає в наявності |
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 |
IKFW60N60DH3EXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 104W Case: PG-TO247-3-AI Mounting: THT Gate charge: 0.21µC Kind of package: tube Collector current: 44A Pulsed collector current: 150A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 189ns Gate-emitter voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
| IKFW60N60DH3EXKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
Description: IGBT TRENCH FS 600V 53A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 1.57mJ (on), 720µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 141 W
товару немає в наявності
В кошику
од. на суму грн.
| IKFW60N60DH3EXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.