на замовлення 30 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 275.56 грн |
| 10+ | 259.47 грн |
| 25+ | 132.81 грн |
| 100+ | 99.61 грн |
| 500+ | 79.23 грн |
| 1000+ | 70.86 грн |
Відгуки про товар
Написати відгук
Технічний опис IKP15N65H5XKSA1 Infineon Technologies
Description: IGBT 650V 30A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A, Supplier Device Package: PG-TO220-3, Td (on/off) @ 25°C: 17ns/160ns, Switching Energy: 120µJ (on), 50µJ (off), Test Condition: 400V, 7.5A, 39Ohm, 15V, Gate Charge: 38 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 45 A, Power - Max: 105 W.
Інші пропозиції IKP15N65H5XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IKP15N65H5XKSA1 | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 30A 105000mW 3-Pin(3+Tab) TO-220 Tube |
товару немає в наявності |
|
 |
IKP15N65H5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5 Type of transistor: IGBT Power dissipation: 105W Case: TO220-3 Mounting: THT Gate charge: 38nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 650V Collector current: 15A Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 кількість в упаковці: 1 шт |
товару немає в наявності |
|
 |
IKP15N65H5XKSA1 | Виробник : Infineon Technologies |
Description: IGBT 650V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: PG-TO220-3 Td (on/off) @ 25°C: 17ns/160ns Switching Energy: 120µJ (on), 50µJ (off) Test Condition: 400V, 7.5A, 39Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 105 W |
товару немає в наявності |
|
|
|
IKP15N65H5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5 Type of transistor: IGBT Power dissipation: 105W Case: TO220-3 Mounting: THT Gate charge: 38nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 650V Collector current: 15A Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H5 |
товару немає в наявності |