IKP20N60TAHKSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Chip N-CH 600V 40A 156000mW Automotive 3-Pin(3+Tab) TO-220 Tube
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Технічний опис IKP20N60TAHKSA1 Infineon Technologies
Description: IGBT 600V 40A 166W TO220-3-1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 41 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A, Supplier Device Package: PG-TO220-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 18ns/199ns, Switching Energy: 770µJ, Test Condition: 400V, 20A, 12Ohm, 15V, Gate Charge: 120 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 166 W.
Інші пропозиції IKP20N60TAHKSA1
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IKP20N60TAHKSA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 600V 40A 156W Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube |
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IKP20N60TAHKSA1 | Виробник : Infineon Technologies |
Description: IGBT 600V 40A 166W TO220-3-1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 41 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Supplier Device Package: PG-TO220-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/199ns Switching Energy: 770µJ Test Condition: 400V, 20A, 12Ohm, 15V Gate Charge: 120 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 166 W |
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| IKP20N60TAHKSA1 | Виробник : Infineon Technologies |
IGBT Transistors DISCRETE SWITCHES |
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