Відгуки про товар
Написати відгук
Технічний опис IKQ120N60TA Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3, Type of transistor: IGBT, Technology: TRENCHSTOP™, Power dissipation: 833W, Case: TO247-3, Mounting: THT, Kind of package: tube, Collector-emitter voltage: 600V, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 772nC, Turn-on time: 76ns, Turn-off time: 343ns, Collector current: 120A, Gate-emitter voltage: ±20V, Pulsed collector current: 480A.
Інші пропозиції IKQ120N60TA
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IKQ120N60TAXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 120A; 833W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 833W Case: TO247-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 772nC Turn-on time: 76ns Turn-off time: 343ns Collector current: 120A Gate-emitter voltage: ±20V Pulsed collector current: 480A |
товару немає в наявності |
В кошику од. на суму грн. |
| IKQ120N60TAXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 120A; 833W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 833W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 772nC
Turn-on time: 76ns
Turn-off time: 343ns
Collector current: 120A
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
товару немає в наявності
В кошику
од. на суму грн.