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IKQ50N120CH3

IKQ50N120CH3 Infineon Technologies

Infineon_IKQ50N120CH3_DataSheet_v02_04_EN.pdf
Виробник: Infineon Technologies
IGBTs INDUSTRY
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Технічний опис IKQ50N120CH3 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3, Type of transistor: IGBT, Power dissipation: 173W, Case: TO247-3, Mounting: THT, Gate charge: 235nC, Kind of package: tube, Gate-emitter voltage: ±20V, Collector current: 50A, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 200A, Manufacturer series: H3, Collector-emitter voltage: 1.2kV.

Інші пропозиції IKQ50N120CH3

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.
IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику  од. на суму  грн.