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IKQ75N120CH3

IKQ75N120CH3 Infineon Technologies

Infineon_IKQ75N120CH3_DataSheet_v02_03_EN-3361840.pdf
Виробник: Infineon Technologies
IGBTs INDUSTRY 14
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Технічний опис IKQ75N120CH3 Infineon Technologies

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 75A, Power dissipation: 256W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 0.37µC, Kind of package: tube, Manufacturer series: H3, Features of semiconductor devices: integrated anti-parallel diode.

Інші пропозиції IKQ75N120CH3

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IKQ75N120CH3XKSA1 IKQ75N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ75N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.
IKQ75N120CH3XKSA1 IKQ75N120CH3.pdf
IKQ75N120CH3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 256W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику  од. на суму  грн.