Технічний опис IKW20N60H3 Infineon technologies
Description: IKW20N60 - DISCRETE IGBT WITH AN, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Power - Max: 170 W, Current - Collector Pulsed (Icm): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 120 nC, Test Condition: 400V, 20A, 14.6Ohm, 15V, Switching Energy: 560µJ (on), 240µJ (off), Td (on/off) @ 25°C: 17ns/194ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3-41, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A, Reverse Recovery Time (trr): 112 ns, Input Type: Standard.
Інші пропозиції IKW20N60H3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IKW20N60H3 | Infineon Technologies |
 Description: IKW20N60 - DISCRETE IGBT WITH ANOperating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Power - Max: 170 W Current - Collector Pulsed (Icm): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Part Status: Active Gate Charge: 120 nC Test Condition: 400V, 20A, 14.6Ohm, 15V Switching Energy: 560µJ (on), 240µJ (off) Td (on/off) @ 25°C: 17ns/194ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-41 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Reverse Recovery Time (trr): 112 ns Input Type: Standard |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKW20N60H3 | Infineon Technologies |
IGBTs 600V 20A 170W |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IKW20N60H3 |
|
Виробник: Infineon Technologies
Description: IKW20N60 - DISCRETE IGBT WITH AN
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 170 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 120 nC
Test Condition: 400V, 20A, 14.6Ohm, 15V
Switching Energy: 560µJ (on), 240µJ (off)
Td (on/off) @ 25°C: 17ns/194ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Reverse Recovery Time (trr): 112 ns
Input Type: Standard
Description: IKW20N60 - DISCRETE IGBT WITH AN
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 170 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 120 nC
Test Condition: 400V, 20A, 14.6Ohm, 15V
Switching Energy: 560µJ (on), 240µJ (off)
Td (on/off) @ 25°C: 17ns/194ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Reverse Recovery Time (trr): 112 ns
Input Type: Standard
товару немає в наявності
В кошику
од. на суму грн.
| IKW20N60H3 |
|
Виробник: Infineon Technologies
IGBTs 600V 20A 170W
IGBTs 600V 20A 170W
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.