Технічний опис IKW25T120
- IGBT, N, 1200V, 25A, TO-247
- Transistor Type:IGBT
- DC Collector Current:50A
- Max Voltage Vce Sat:2.2V
- Max Power Dissipation:190W
- Collector-to-Emitter Breakdown Voltage:1200V
- Operating Temperature Range:-40`C to +150`C
- SVHC:Cobalt dichloride
- Case Style:TO-247
- Max Current Ic Continuous a:25A
- No. of Transistors:1
- Power Dissipation:190W
- Termination Type:Through Hole
- Transistor Polarity:N Channel
- Voltage Vces:1200V
Інші пропозиції IKW25T120
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IKW25T120 | Виробник : Infineon Technologies |
 Description: IKW25T120 - DISCRETE IGBT WITH APackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 200 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: PG-TO247-3-21 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 50ns/560ns Switching Energy: 2mJ (on), 2.2mJ (off) Test Condition: 600V, 25A, 22Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 190 W |
товару немає в наявності |
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IKW25T120 | Виробник : Infineon Technologies |
IGBTs LOW LOSS DuoPack 1200V 25A |
товару немає в наявності |