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Технічний опис IKW25T120
- IGBT, N, 1200V, 25A, TO-247
- Transistor Type:IGBT
- DC Collector Current:50A
- Max Voltage Vce Sat:2.2V
- Max Power Dissipation:190W
- Collector-to-Emitter Breakdown Voltage:1200V
- Operating Temperature Range:-40`C to +150`C
- SVHC:Cobalt dichloride
- Case Style:TO-247
- Max Current Ic Continuous a:25A
- No. of Transistors:1
- Power Dissipation:190W
- Termination Type:Through Hole
- Transistor Polarity:N Channel
- Voltage Vces:1200V
