Технічний опис IKW30N60DTP Infineon
Description: HIGH SPEED IGBT, Power - Max: 200 W, Current - Collector Pulsed (Icm): 90 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 53 A, Part Status: Active, Gate Charge: 130 nC, Test Condition: 400V, 30A, 10.5Ohm, 15V, Switching Energy: 710µJ (on), 420µJ (off), Td (on/off) @ 25°C: 15ns/179ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A, Reverse Recovery Time (trr): 76 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Інші пропозиції IKW30N60DTP
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IKW30N60DTP | Infineon Technologies |
Description: HIGH SPEED IGBTPower - Max: 200 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 53 A Part Status: Active Gate Charge: 130 nC Test Condition: 400V, 30A, 10.5Ohm, 15V Switching Energy: 710µJ (on), 420µJ (off) Td (on/off) @ 25°C: 15ns/179ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3 Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Reverse Recovery Time (trr): 76 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
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В кошику од. на суму грн. |
| IKW30N60DTP | Infineon Technologies |
IGBT Transistors INDUSTRY 14 |
товару немає в наявності |
В кошику од. на суму грн. |
| IKW30N60DTP |
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Виробник: Infineon Technologies
Description: HIGH SPEED IGBT
Power - Max: 200 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Part Status: Active
Gate Charge: 130 nC
Test Condition: 400V, 30A, 10.5Ohm, 15V
Switching Energy: 710µJ (on), 420µJ (off)
Td (on/off) @ 25°C: 15ns/179ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Reverse Recovery Time (trr): 76 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: HIGH SPEED IGBT
Power - Max: 200 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Part Status: Active
Gate Charge: 130 nC
Test Condition: 400V, 30A, 10.5Ohm, 15V
Switching Energy: 710µJ (on), 420µJ (off)
Td (on/off) @ 25°C: 15ns/179ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Reverse Recovery Time (trr): 76 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IKW30N60DTP |
![]() |
Виробник: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
товару немає в наявності
В кошику
од. на суму грн.



