IKW40N65RH5XKSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IKW40N65RH5XKSA1 - IGBT, 650V, 74A, 250W, To-247, 1.65Vsat
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 250W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 74A
Anzahl der Pins: 3Pin(s)
Produktpalette: TRENCHSTOP 5 H5 CoolSiC Gen VI
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
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Технічний опис IKW40N65RH5XKSA1 INFINEON
Description: IGBT TRENCH FS 650V 74A TO247-3, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 74 A, Part Status: Active, Gate Charge: 95 nC, Test Condition: 400V, 20A, 15Ohm, 15V, Switching Energy: 160µJ (on), 120µJ (off), Td (on/off) @ 25°C: 18ns/165ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 250 W.
Інші пропозиції IKW40N65RH5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IKW40N65RH5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A TO247-3 Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 74 A Part Status: Active Gate Charge: 95 nC Test Condition: 400V, 20A, 15Ohm, 15V Switching Energy: 160µJ (on), 120µJ (off) Td (on/off) @ 25°C: 18ns/165ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKW40N65RH5XKSA1 | Infineon Technologies |
IGBTs 650 V, 40 A IGBT Discrete with Silicon Carbide Schottky diode |
товару немає в наявності |
В кошику од. на суму грн. |
| IKW40N65RH5XKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-3
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/165ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
Description: IGBT TRENCH FS 650V 74A TO247-3
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 160µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 18ns/165ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 250 W
товару немає в наявності
В кошику
од. на суму грн.
| IKW40N65RH5XKSA1 |
|
Виробник: Infineon Technologies
IGBTs 650 V, 40 A IGBT Discrete with Silicon Carbide Schottky diode
IGBTs 650 V, 40 A IGBT Discrete with Silicon Carbide Schottky diode
товару немає в наявності
В кошику
од. на суму грн.