IKW50N60DTPXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.20 грн |
| 30+ | 142.96 грн |
Відгуки про товар
Написати відгук
Технічний опис IKW50N60DTPXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 115 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/215ns, Switching Energy: 1.53mJ (on), 850µJ (off), Test Condition: 400V, 50A, 7Ohm, 15V, Gate Charge: 249 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 319.2 W.
Інші пропозиції IKW50N60DTPXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IKW50N60DTPXKSA1 | Infineon |
IGBT TRENCH FS 600V 80A TO247-3 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IKW50N60DTPXKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKW50N60DTPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 159.6W Case: TO247-3 Mounting: THT Gate charge: 249nC Kind of package: tube Pulsed collector current: 150A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 50ns Turn-off time: 233ns Gate-emitter voltage: ±20V Collector current: 61A |
товару немає в наявності |
В кошику од. на суму грн. |
| IKW50N60DTPXKSA1 |
|
Виробник: Infineon
IGBT TRENCH FS 600V 80A TO247-3 Транзистори
IGBT TRENCH FS 600V 80A TO247-3 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IKW50N60DTPXKSA1 |
|
Виробник: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
товару немає в наявності
В кошику
од. на суму грн.
| IKW50N60DTPXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 233ns
Gate-emitter voltage: ±20V
Collector current: 61A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 233ns
Gate-emitter voltage: ±20V
Collector current: 61A
товару немає в наявності
В кошику
од. на суму грн.