IKW50N65H5AXKSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans IGBT Chip N-CH 650V 80A 270000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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Технічний опис IKW50N65H5AXKSA1 Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 58 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench, Td (on/off) @ 25°C: 21ns/173ns, Switching Energy: 450µJ (on), 160µJ (off), Test Condition: 400V, 25A, 12Ohm, 15V, Gate Charge: 116 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 270 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IKW50N65H5AXKSA1
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IKW50N65H5AXKSA1 | Виробник : Infineon Technologies |
Description: IGBT TRENCH 650V 80A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 58 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 21ns/173ns Switching Energy: 450µJ (on), 160µJ (off) Test Condition: 400V, 25A, 12Ohm, 15V Gate Charge: 116 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 270 W Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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IKW50N65H5AXKSA1 | Виробник : Infineon Technologies |
IGBT Transistors DISCRETE SWITCHES |
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