Технічний опис IKW75N60H3 Infineon technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/265ns, Switching Energy: 3mJ (on), 1.7mJ (off), Test Condition: 400V, 75A, 5.2Ohm, 15V, Gate Charge: 470 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 428 W.
Інші пропозиції IKW75N60H3
Фото | Назва | Виробник | Інформація |
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IKW75N60H3 | Виробник : Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 190 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/265ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 5.2Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
товару немає в наявності |
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IKW75N60H3 | Виробник : Infineon Technologies |
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товару немає в наявності |