Технічний опис IKW75N60H3 Infineon technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN, Power - Max: 428 W, Current - Collector Pulsed (Icm): 225 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 80 A, Part Status: Active, Gate Charge: 470 nC, Test Condition: 400V, 75A, 5.2Ohm, 15V, Switching Energy: 3mJ (on), 1.7mJ (off), Td (on/off) @ 25°C: 31ns/265ns, IGBT Type: Trench Field Stop, Supplier Device Package: PG-TO247-3-41, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, Reverse Recovery Time (trr): 190 ns, Input Type: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Інші пропозиції IKW75N60H3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| IKW75N60H3 | Infineon |
 IGBTs - Single, 600V, 80A, 428W, TO-247-3 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
| IKW75N60H3 | Infineon Technologies |
Description: IKW75N60 - DISCRETE IGBT WITH AN Power - Max: 428 W Current - Collector Pulsed (Icm): 225 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 80 A Part Status: Active Gate Charge: 470 nC Test Condition: 400V, 75A, 5.2Ohm, 15V Switching Energy: 3mJ (on), 1.7mJ (off) Td (on/off) @ 25°C: 31ns/265ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-41 Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Reverse Recovery Time (trr): 190 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IKW75N60H3 | Infineon Technologies |
IGBTs INDUSTRY |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IKW75N60H3 |
|
Виробник: Infineon
IGBTs - Single, 600V, 80A, 428W, TO-247-3 Транзистори
IGBTs - Single, 600V, 80A, 428W, TO-247-3 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IKW75N60H3 |
|
Виробник: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Description: IKW75N60 - DISCRETE IGBT WITH AN
Power - Max: 428 W
Current - Collector Pulsed (Icm): 225 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 470 nC
Test Condition: 400V, 75A, 5.2Ohm, 15V
Switching Energy: 3mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 31ns/265ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-41
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Reverse Recovery Time (trr): 190 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IKW75N60H3 |
|
Виробник: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.