Технічний опис IKW75N60H3 Infineon technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 190 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/265ns, Switching Energy: 3mJ (on), 1.7mJ (off), Test Condition: 400V, 75A, 5.2Ohm, 15V, Gate Charge: 470 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 428 W.
Інші пропозиції IKW75N60H3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| IKW75N60H3 | Infineon |
 IGBTs - Single, 600V, 80A, 428W, TO-247-3 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
| IKW75N60H3 | Infineon Technologies |
Description: IKW75N60 - DISCRETE IGBT WITH AN Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 190 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/265ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 5.2Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
IKW75N60H3 | Infineon Technologies |
IGBTs INDUSTRY |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IKW75N60H3 |
|
Виробник: Infineon
IGBTs - Single, 600V, 80A, 428W, TO-247-3 Транзистори
IGBTs - Single, 600V, 80A, 428W, TO-247-3 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| IKW75N60H3 |
|
Виробник: Infineon Technologies
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IKW75N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
товару немає в наявності
В кошику
од. на суму грн.
| IKW75N60H3 |
|
Виробник: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.