IKW75N60TAFKSA1

IKW75N60TAFKSA1 Infineon Technologies


dgdlfolderid5546d4694909da4801490a07012f053bfileid5546d4624933b87.pdf Виробник: Infineon Technologies
Trans IGBT Chip N-CH 600V 80A 428000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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Технічний опис IKW75N60TAFKSA1 Infineon Technologies

Description: IGBT TRENCH/FS 600V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 121 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A, Supplier Device Package: PG-TO247-3-1, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 33ns/330ns, Switching Energy: 4.5mJ, Test Condition: 400V, 75A, 5Ohm, 15V, Gate Charge: 470 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 428 W.

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IKW75N60TAFKSA1 IKW75N60TAFKSA1 Виробник : Infineon Technologies IKW75N60T+Rev2_6G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42890113e25 Description: IGBT TRENCH/FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 121 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/330ns
Switching Energy: 4.5mJ
Test Condition: 400V, 75A, 5Ohm, 15V
Gate Charge: 470 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
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IKW75N60TAFKSA1 IKW75N60TAFKSA1 Виробник : Infineon Technologies Infineon-IKW75N60T-DS-v02_08-EN-77728.pdf IGBT Transistors 600V 75A 100nA
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