IKY40N120CS6XKSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IKY40N120CS6XKSA1 - IGBT, 80 A, 1.85 V, 500 W, 1.2 kV, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.85V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: TRENCHSTOP IGBT6
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 2+ | 492.56 грн |
| 5+ | 395.52 грн |
| 10+ | 298.49 грн |
Відгуки про товар
Написати відгук
Технічний опис IKY40N120CS6XKSA1 INFINEON
Description: IGBT TRENCH FS 1200V 80A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 255 ns, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A, Supplier Device Package: PG-TO247-4-2, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/315ns, Switching Energy: 1.45mJ (on), 1.55mJ (off), Test Condition: 600V, 40A, 9Ohm, 15V, Gate Charge: 285 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
Інші пропозиції IKY40N120CS6XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IKY40N120CS6XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 1.45mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKY40N120CS6XKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
товару немає в наявності |
В кошику од. на суму грн. |
| IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Power dissipation: 250W Case: TO247PLUS-4 Mounting: THT Gate charge: 285nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector-emitter voltage: 1.2kV Turn-on time: 54ns Turn-off time: 342ns Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
товару немає в наявності |
В кошику од. на суму грн. |
| IKY40N120CS6XKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/315ns
Switching Energy: 1.45mJ (on), 1.55mJ (off)
Test Condition: 600V, 40A, 9Ohm, 15V
Gate Charge: 285 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
товару немає в наявності
В кошику
од. на суму грн.
| IKY40N120CS6XKSA1 |
|
Виробник: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
товару немає в наявності
В кошику
од. на суму грн.
| IKY40N120CS6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 250W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector-emitter voltage: 1.2kV
Turn-on time: 54ns
Turn-off time: 342ns
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 160A
товару немає в наявності
В кошику
од. на суму грн.