IKZ75N65EL5XKSA1 Infineon Technologies
на замовлення 124 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 624.65 грн |
| 10+ | 527.65 грн |
| 25+ | 416.88 грн |
| 100+ | 382.91 грн |
| 240+ | 359.61 грн |
| 480+ | 336.96 грн |
| 1200+ | 303.67 грн |
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Технічний опис IKZ75N65EL5XKSA1 Infineon Technologies
Description: IGBT 650V 100A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 59 ns, Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A, Supplier Device Package: PG-TO247-4, Td (on/off) @ 25°C: 120ns/275ns, Switching Energy: 1.57mJ (on), 3.2mJ (off), Test Condition: 400V, 75A, 23Ohm, 15V, Gate Charge: 436 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 536 W.
Інші пропозиції IKZ75N65EL5XKSA1
| Фото | Назва | Виробник | Інформація |
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IKZ75N65EL5XKSA1 | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 650V 100A 536000mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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IKZ75N65EL5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 268W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 436nC Kind of package: tube Turn-on time: 143ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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IKZ75N65EL5XKSA1 | Виробник : Infineon Technologies |
Description: IGBT 650V 100A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 120ns/275ns Switching Energy: 1.57mJ (on), 3.2mJ (off) Test Condition: 400V, 75A, 23Ohm, 15V Gate Charge: 436 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 536 W |
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IKZ75N65EL5XKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 100A; 268W; TO247-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 100A Power dissipation: 268W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 436nC Kind of package: tube Turn-on time: 143ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |