IKZA75N65SS5XKSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IKZA75N65SS5XKSA1 - IGBT, 650V, 80A, TO-247, Produktreihe Trenchstop 5 S5 Coolsic Gen Vi, 395W
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.35V
Verlustleistung: 395W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-247
Dauerkollektorstrom: 80A
Anzahl der Pins: 4Pin(s)
Produktpalette: TRENCHSTOP 5 S5 CoolSiC Gen VI
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Betriebstemperatur, max.: 175°C
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Технічний опис IKZA75N65SS5XKSA1 INFINEON
Description: INFINEON - IKZA75N65SS5XKSA1 - IGBT, 650V, 80A, TO-247, Produktreihe Trenchstop 5 S5 Coolsic Gen Vi, 395W, tariffCode: 85412900, Transistormontage: Durchsteckmontage, euEccn: NLR, rohsCompliant: YES, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 1.35V, Verlustleistung: 395W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-247, Dauerkollektorstrom: 80A, Anzahl der Pins: 4Pin(s), Produktpalette: TRENCHSTOP 5 S5 CoolSiC Gen VI, Kollektor-Emitter-Spannung, max.: 650V, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Betriebstemperatur, max.: 175°C.
Інші пропозиції IKZA75N65SS5XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IKZA75N65SS5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A Supplier Device Package: PG-TO247-4-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/145ns Switching Energy: 240µJ (on), 750µJ (off) Test Condition: 400V, 75A, 5.6Ohm, 15V Gate Charge: 164 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IKZA75N65SS5XKSA1 | Infineon Technologies |
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode |
товару немає в наявності |
В кошику од. на суму грн. |
| IKZA75N65SS5XKSA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 650V; 80A; 395W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 395W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 164nC Technology: Field Stop; Trench |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. |
| IKZA75N65SS5XKSA1 |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 240µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
товару немає в наявності
В кошику
од. на суму грн.
| IKZA75N65SS5XKSA1 |
|
Виробник: Infineon Technologies
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
IGBTs 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode
товару немає в наявності
В кошику
од. на суму грн.
| IKZA75N65SS5XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 395W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Technology: Field Stop; Trench
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 650V; 80A; 395W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 395W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 164nC
Technology: Field Stop; Trench
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику
од. на суму грн.